Silicon and semiconducting oxide thin-film transistor displays

摘要

An electronic device display may have an array of pixel circuits. Each pixel circuit may include an organic light-emitting diode and a drive transistor. Each drive transistor may be adjusted to control how much current flows through the organic light-emitting diode. Each pixel circuit may include one or more additional transistors such as switching transistors and a storage capacitor. Semiconducting oxide transistors and silicon transistors may be used in forming the transistors of the pixel circuits. The storage capacitors and the transistors may be formed using metal layers, semiconductor structures, and dielectric layers. Some of the layers may be removed along the edge of the display to facilitate bending. The dielectric layers may have a stepped profile that allows data lines in the array to be stepped down towards the surface of the substrate as the data lines extend into an inactive edge region.

主权项

1. An organic light-emitting diode display, comprising:
a substrate; an array of pixel circuits that form an active area of the substrate; circuitry in an inactive area of the substrate; dielectric layers that have a first thickness in the active area, are not present in the inactive area, and have a second thickness that is less than the first thickness between the active area and the inactive area, wherein each pixel circuit comprises:
an organic light-emitting diode;a silicon transistor coupled in series with the organic light-emitting diode;a storage capacitor coupled to the silicon transistor; anda semiconducting oxide transistor coupled to the storage capacitor.