Semiconductor Device And Bump Formation Process

摘要

A semiconductor device includes a solder bump overlying and electrically connected to a pad region, and a metal cap layer formed on at least a portion of the solder bump. The metal cap layer has a melting temperature greater than the melting temperature of the solder bump.

主权项

1. A method of forming a packaging assembly, the method comprising disposing a bump structure between a semiconductor substrate and a package substrate, the bump structure electrically connecting the semiconductor substrate to the package substrate, wherein the bump structure comprises a solder bump and a metal cap layer covering at least a portion of the solder bump while a top portion of the solder bump remains exposed, and the metal cap layer has a melting temperature greater than a melting temperature of the solder bump.