| 摘要 |
PURPOSE:To enable the raise in heat conductivity of a silicon carbide sintered compact without using a toxic substance such as BeO. CONSTITUTION:The highly heat conductive silicon carbide compact is obtained by burning a compact comprising silicon carbide as a principal component and at least carbon and boron as a sintering assistant in a vacuum or an inert atmosphere, preparing a sintered compact having >=94% relative density and then heat-treating the resultant sintered compact at a temperature as high as >=1700 deg.C under a pressure as high as >=1000 atm. This sintered compact has >=100W/m.k heat conductivity. |
