发明名称 |
Silicon carbide powder and method for manufacturing the same |
摘要 |
Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a β-type crystal phase and a grain size in a range of about 5 μm to about 100 μm. |
申请公布号 |
US9534316(B2) |
申请公布日期 |
2017.01.03 |
申请号 |
US201314373579 |
申请日期 |
2013.01.18 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
Kim Byung Sook;Shin Dong Geun;Kim Bum Sup;Han Jung Eun |
分类号 |
C01B31/00;C30B25/20;C01B31/36;C30B29/36 |
主分类号 |
C01B31/00 |
代理机构 |
Saliwanchik, Lloyd & Eisenschenk |
代理人 |
Saliwanchik, Lloyd & Eisenschenk |
主权项 |
1. A method of preparing beta-silicon carbide (β-SiC) powder comprising:
forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed; and reacting the mixture, wherein a mole ratio or carbon (C) constituting the carbon (C) source to silicon (Si) constituting the silicon (Si) source is in a range of about 1:1.8 to about 1:2.7, wherein a mole ratio between silicon carbide (SiC) and a sum of the silicon carbide (SiC) and the silicon (Si) source is in a range of about 0.01:1 to about 0.2:1, and wherein the beta-silicon carbide (β-SiC) powder has a purity in a range of 99.999% to 99.99999999%. |
地址 |
Seoul KR |