发明名称 SOLID SOURCE AND METHOD FOR THE SYNTHESIS OF SILICON-CONTAINING PRECURSORS FOR CHEMICAL VAPOR DEPOSITION
摘要 The present document described a solid source and a method for synthesis of silicon-containing precursors for chemical vapor deposition. The solid source comprises a solid polysilane; an energy coupling agent distributed in the solid polysilane; and hydrogen, mixed with the solid polysilane and the energy coupling agent distributed in the solid polysilane, in a necessary amount to satisfy a hydrogen deficiency during a hydrogenolysis reaction.
申请公布号 US2016347620(A1) 申请公布日期 2016.12.01
申请号 US201415030003 申请日期 2014.10.22
申请人 GESTION SOCPRA INC. ;UNIVERSITÉ DE BISHOP 发明人 SCARLETE Mihai;AKTIK Cetin
分类号 C01B33/04;C09D5/24;C09K5/14;C23C16/22;C23C16/448 主分类号 C01B33/04
代理机构 代理人
主权项 1. A solid source for synthesis of silicon-containing precursors for chemical vapor deposition, the solid source comprising: a solid polysilane; an energy coupling agent distributed in the solid polysilane; and hydrogen, mixed with the solid polysilane and the energy coupling agent distributed in the solid polysilane, in a necessary amount to satisfy a hydrogen deficiency during a hydrogenolysis reaction.
地址 Sherbrooke CA