发明名称 |
SOLID SOURCE AND METHOD FOR THE SYNTHESIS OF SILICON-CONTAINING PRECURSORS FOR CHEMICAL VAPOR DEPOSITION |
摘要 |
The present document described a solid source and a method for synthesis of silicon-containing precursors for chemical vapor deposition. The solid source comprises a solid polysilane; an energy coupling agent distributed in the solid polysilane; and hydrogen, mixed with the solid polysilane and the energy coupling agent distributed in the solid polysilane, in a necessary amount to satisfy a hydrogen deficiency during a hydrogenolysis reaction. |
申请公布号 |
US2016347620(A1) |
申请公布日期 |
2016.12.01 |
申请号 |
US201415030003 |
申请日期 |
2014.10.22 |
申请人 |
GESTION SOCPRA INC. ;UNIVERSITÉ DE BISHOP |
发明人 |
SCARLETE Mihai;AKTIK Cetin |
分类号 |
C01B33/04;C09D5/24;C09K5/14;C23C16/22;C23C16/448 |
主分类号 |
C01B33/04 |
代理机构 |
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代理人 |
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主权项 |
1. A solid source for synthesis of silicon-containing precursors for chemical vapor deposition, the solid source comprising:
a solid polysilane; an energy coupling agent distributed in the solid polysilane; and hydrogen, mixed with the solid polysilane and the energy coupling agent distributed in the solid polysilane, in a necessary amount to satisfy a hydrogen deficiency during a hydrogenolysis reaction. |
地址 |
Sherbrooke CA |