| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
Provided is a semiconductor device including a substrate, gate electrodes vertically stacked on the substrate, insulating patterns between the gate electrodes, an active pillar provided to penetrate the gate electrodes and the insulating patterns and electrically coupled with the substrate, and a memory pattern provided between the gate electrodes and the active pillar and between the insulating patterns and the active pillar. The gate electrodes include edge portions extending between the memory pattern and the insulating patterns. |
| 申请公布号 |
US2016351582(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201615165135 |
申请日期 |
2016.05.26 |
| 申请人 |
Kim Nambin;KANG DAEWOONG;KIM DAE SIN;SEOL KWANG SOO;SON HOMIN;LEE CHANGSUB;LIM SEUNGHYUN;HUR SUNGHOI |
发明人 |
Kim Nambin;KANG DAEWOONG;KIM DAE SIN;SEOL KWANG SOO;SON HOMIN;LEE CHANGSUB;LIM SEUNGHYUN;HUR SUNGHOI |
| 分类号 |
H01L27/115;H01L29/792 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; gate electrodes vertically stacked on the substrate; insulating patterns between the gate electrodes; an active pillar that penetrates the gate electrodes and the insulating patterns and that is electrically coupled with the substrate; and a memory pattern between the gate electrodes and the active pillar and between the insulating patterns and the active pillar, wherein the gate electrodes comprise edge portions that extend between the memory pattern and the insulating patterns. |
| 地址 |
Seoul KR |
