Method for forming a group III nitride material on a silicon substrate

摘要

The present invention relates to semiconductor process technology and devices.
In particular, the present invention relates to a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate, wherein the substrate is exposed to at least 0,01 µmol/cm 2 of one or more organometallic compounds containing Al, in a flow of less than 5 µmol/min. The invention is equally related to the semiconductor structure obtained by the method, and to a device comprising said structure.