| 摘要 |
One object is to provide a novel semiconductor device which can hold stored data even when not powered and which has an unlimited number of writing operations. Another object is to reduce a circuit size and to improve reliability of writing and reading of data. When a memory cell using a transistor including an oxide semiconductor layer is subjected to the verification operation and reading of data, a dual-gate transistor showing different threshold voltages is used as a resistor; thus, stable verification operation and reading operation can be performed by only a reference potential circuit. |
