| 摘要 |
A first through hole 16 and a second through hole 17 are formed which penetrate from a rear surface 10a side of an element formation surface 10b of a semiconductor substrate (silicon substrate 10) in which an element section Ra is formed, to the element formation surface. An outer circumference insulation film 12 is formed on the side wall of the bottom of the second through hole 17 to surround the outer circumference of the second through hole 17 having a larger opening diameter among these through holes. |
