SCHOTTKY DIODE HAVING FLOATING GUARD RINGS

摘要

The present examples relate to a Schottky diode having floating guard rings and an additional element isolation layer configured to further improve a breakdown voltage of the Schottky diode, while maintaining the turn-on voltage and current in the forward characteristic, compared to a related Schottky diode. The floating guard rings in the examples are located in a position between the anode and the cathode regions or under the anode.

主权项

1. A Schottky diode having a floating guard ring comprising:
a deep well of a first conductivity type formed in a substrate; a first guard ring of a second conductivity type in a non-floating state formed to surround a center region of the deep well; a second guard ring of a second conductivity type in a floating state formed in an outer region of the first guard ring to surround the first guard ring; a first well region of a first conductivity type formed in an outer region of the first guard ring to surround the second guard ring; element isolation layers formed on the region between the first guard ring and the second guard ring, and the region between the second guard ring and first well region; an anode electrode formed on the substrate and electrically connected to the deep well and the first guard ring; a cathode electrode formed on the substrate and electrically connected to the first well region; and an additional element isolation layer formed between the second guard ring and the cathode electrode.