| 发明名称 |
BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A backside illuminated (BSI) image sensor comprises a semiconductor substrate having a first surface and a second surface opposite to the first surface; a photosensitive element in the semiconductor substrate; a gate structure partially over the first surface of the semiconductor substrate; and a temporary carrier depository in proximity to the first surface of the semiconductor substrate, wherein the gate structure has a plug portion extending from the first surface toward the second surface. The plug portion of the gate structure helps to increase the charge transfer efficiency so as to improve quantum efficiency of the BSI image sensor. |
| 申请公布号 |
US2016343752(A1) |
申请公布日期 |
2016.11.24 |
| 申请号 |
US201514854672 |
申请日期 |
2015.09.15 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD |
发明人 |
TSAI TSUNG-HAN;CHENG YUN-WEI;CHOU CHUN-HAO;LEE KUO-CHENG;HSU YUNG-LUNG;CHEN HSIN-CHI |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An image sensor including a pixel array, wherein the pixel array comprises a plurality of pixels, and wherein each of the plurality of pixels includes:
a semiconductor substrate having a first surface and a second surface opposite to the first surface; a photosensitive element in the semiconductor substrate; a gate structure partially over the first surface of the semiconductor substrate; and a temporary carrier depository in proximity to the first surface of the semiconductor substrate, wherein the gate structure comprises a plug portion extending from the first surface toward the second surface. |
| 地址 |
HSINCHU TW |
