发明名称 BI-DIRECTIONAL DOUBLE-PASS MULTI-BEAM WRITING
摘要 To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region (R2) to be exposed, and this movement defines a number of stripes (181-183, 187-189) covering said region (R2) in sequential exposures and having respective widths (y0, x0). The number of stripes is written in at least two sweeps which each have a respective general direction (d1, d2), but the general direction is different for different sweeps, for instance perpendicular to each other. Each stripe (181-183, 187-189) belongs to exactly one sweep and runs substantially parallel to the other stripes of the same sweep, namely, along the respective general direction. For each sweep the widths (y0, x0), as measured across said main direction, of the stripes of one sweep combine into a cover of the total width (Ry, Rx) of the region.
申请公布号 EP3096342(A1) 申请公布日期 2016.11.23
申请号 EP20160160621 申请日期 2016.03.16
申请人 IMS NANOFABRICATION AG 发明人 PLATZGUMMER, ELMAR
分类号 H01J37/04;G03F7/20;H01J37/317 主分类号 H01J37/04
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