发明名称 LITHOGRAPHY SYSTEM, SENSOR AND MEASURING METHOD
摘要 Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilising said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.
申请公布号 EP1943662(B1) 申请公布日期 2016.11.23
申请号 EP20060783922 申请日期 2006.09.14
申请人 MAPPER LITHOGRAPHY IP B.V. 发明人 KRUIT, PIETER;WIELAND, MARCO JAN-JACO;SLOT, ERWIN;TEEPEN, TIJS FRANS;STEENBRINK, STIJN WILLEM HERMAN KAREL
分类号 H01J37/317 主分类号 H01J37/317
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