| 摘要 |
PROBLEM TO BE SOLVED: To provide a Cu wiring protective film used as a protective film of Cu wiring materials, reducing difference of a work function with ITO film and making connection with ITO film to be an ohmic connection, and excellent in etching property, oxidation resistance and corrosion resistance, and to provide a Cu alloy spattering target for forming the protective film.SOLUTION: There is provided a Cu wiring protective film used for a constitution of Cu wiring/Cu wiring protective film/ITO film, having a Cu alloy containing Ni of 20 wt.% to 65 wt.%, Al and/or Ti of 0.2 wt.% to 5.0 wt.% and 90 mass% or more of balance of Cu, and value of a work function in a range of 0 eV to -0.2 eV to the work function of the ITO film. There is also provided a Cu alloy spattering target for forming the protective film. |
