发明名称 半導体ウエハ、放射線検出素子、放射線検出器、および化合物半導体単結晶の製造方法
摘要 PROBLEM TO BE SOLVED: To provide a radiation detector provided with a radiation detection element with a CdZnTe or CdTe single crystal as a substrate which has improved radiation detection performance.SOLUTION: A specified amount of Te and a specified amount of Cd are charged into a heat-resistant container, and Zn and In as an impurity are charged into the container by adjusting the Zn concentration in the single crystal to 1.6-2.2 at% and the In concentration in the single crystal to 0.04-0.25 wt.ppm or, instead of In, Cl as an impurity is charged into the container by adjusting the Cl concentration in the single crystal to 0.5-3.0 wt.ppm. The container is laid inside a furnace and heated to melt Te, Cd and Zn or Te and Cd so as to form molten metal while causing In or Cl to diffuse into the molten metal, and a single crystal is grown from the molten metal.
申请公布号 JP6018532(B2) 申请公布日期 2016.11.02
申请号 JP20130072830 申请日期 2013.03.29
申请人 JX金属株式会社 发明人 村上 幸司;野田 朗;平野 立一
分类号 C30B29/48;C30B11/10;G01T1/24 主分类号 C30B29/48
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