发明名称 MULTIPLE CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND MULTIPLE CHARGED PARTICLE BEAM LITHOGRAPHY METHOD
摘要 PURPOSE: To provide a multi-beam lithography apparatus capable of reducing the irradiation amount error, without increasing the number of paths of multiple drawing.CONSTITUTION: A lithography apparatus 100 includes a data division unit 54 receiving first irradiation time data for k paths defined by n bits, for every beam irradiation position when performing multiple drawing of k paths or more by using a multi-beam, and dividing the first irradiation time data for k paths into k second irradiation time data of different number of bits the preset total of which is n bits, a data transfer processing unit 56 for transferring the corresponding second irradiation time data out of the k second irradiation time data for that beam, for each path, a resolution information transfer processing unit 58 for transferring the corresponding resolution information out of the k resolution information, for each path, an irradiation time calculation unit 74 for calculating the irradiation time of the corresponding beam out of the multi-beam in the path by using the transferred resolution information and second irradiation time data, for each path, and a drawing unit 150 for drawing a pattern in a sample by using a multi-beam including the corresponding beam of calculated irradiation time, for each of k paths.SELECTED DRAWING: Figure 1
申请公布号 JP2016184671(A) 申请公布日期 2016.10.20
申请号 JP20150064281 申请日期 2015.03.26
申请人 NUFLARE TECHNOLOGY INC 发明人 INOUE HIDEO
分类号 H01L21/027;G03F7/20;H01J37/305 主分类号 H01L21/027
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