| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that although a laser having an active layer composed only of an InGaAsP-based material has good long term stability, a carrier block layer capable of significantly suppressing leakage of electrons from an active layer to a p-type layer has not yet proposed, and degradation of the laser element characteristics is severe during high temperature operation compared with a laser in which the active layer is composed of an AlGaInAs material.SOLUTION: In a semiconductor laser manufactured on an InP substrate, AlInPSb or AlGaInPSb is used as the material of a carrier block layer. When compared with prior art where the carrier block layer is composed of such a material as AlInAs, the band discontinuity can be increased in the conduction band. Furthermore, the degree of freedom of design can be widened, by reducing the constraints of layer structure including the carrier block layer. |
