发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce stress due to potential variation of one of a source and drain of a transistor.SOLUTION: In a structure, the high-level potential of a control signal such as a clock signal is reduced, and a boosting unit is separately provided in an output unit of a pulse output circuit. This structure allows the amplitude of an output signal to be compensated while reducing stress due to the potential variation of one of a source and drain of a transistor. In this case, to bring the transistor into an OFF state, a potential difference between the low level potential of the control signal and the power supply potential on a low-potential side is set to 0 or within a fixed value range.SELECTED DRAWING: Figure 1
申请公布号 JP2016177863(A) 申请公布日期 2016.10.06
申请号 JP20160078908 申请日期 2016.04.11
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANADA YOSHIFUMI;SATO MANABU
分类号 G11C19/28;G02F1/133;G09G3/20;G09G3/36;H01L29/786;H03K19/0175 主分类号 G11C19/28
代理机构 代理人
主权项
地址