| 摘要 |
In an element in which the spin is transported in the semiconductor, it is difficult to achieve both of the two aspects of low element resistance and high spin output. The magnetoresistive element is characterized in including a semiconductor channel layer, a pinned layer disposed on the semiconductor channel layer via a first tunnel layer, a free layer disposed on the semiconductor channel layer via a second tunnel layer, wherein the semiconductor channel layer substantially consists of a first region containing an interface with the first tunnel layer, a second region containing an interface with the second tunnel layer, and a third region, impurity concentrations in the first region and the second region are higher than 1×10 19 cm -3 , an impurity concentration in the third region is 1×10 19 cm -3 or less, the first region and the second region are separated by the third region, and the impurity concentrations in the first region and the second region decrease monotonically in the thickness direction of the semiconductor channel layer from the interface between the semiconductor channel layer and the first tunnel layer and the interface between the semiconductor channel layer and the second tunnel layer, respectively. |
