| 摘要 |
This photovoltaic device (100) is provided with a crystalline semiconductor substrate (10), and a first amorphous layer (12a) formed on the main surface of the substrate (10). At the interface between the substrate (10) and the first amorphous layer (12a), electrical conductivity can be improved while suppressing an increase in recombination centers, and power generation efficiency can be improved by having a p-type dopant density profile that decreases stepwise in the film thickness direction from the vicinity of the interface with the substrate (10). |
