发明名称 Composite reconstituted wafer structures
摘要 A reconstituted electronic device comprises a substrate having a first surface, comprising a metal carrier 120 having an insulating coating 121 on a face with at least one via 122 electrically connected to the metal carrier through the insulating coating, at least one die 126 positioned on the insulating coating and encapsulated within a moulding material 124 deposited over the insulating coating, a surface of the die and at least one region of the insulating coating being exposed in first surface of the moulding material and forming the first surface of the substrate, and at least one metal redistribution layer 123 on the first surface wherein the metal carrier defines a first plate of a metal-insulator-metal capacitor, the coating defines a dielectric of that capacitor, and the metal redistribution layer defines a second plate of that capacitor. Optionally the metal redistribution layer may be connected to the metallic via. The face of the insulating coating may be non-planar and may line on the same plane as the exposed surface of the die.
申请公布号 GB2537060(A) 申请公布日期 2016.10.05
申请号 GB20160010826 申请日期 2012.09.25
申请人 Cambridge Silicon Radio Limited 发明人 Simon Stacey;Vlad Lenive
分类号 H01L21/56;H01L23/31;H01L23/48;H01L23/64 主分类号 H01L21/56
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