METHOD OF MANUFACTURING Cu WIRING

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing Cu wiring, capable of forming a continuous Ru film having a good surface state on a MnOx film with a good film-forming property and filling Cu with a good fillability.SOLUTION: A method for manufacturing Cu wiring that fills a recess 203, with respect to a substrate W that has an interlayer insulating film 202 having a surface on which the recess 203 with a predetermined pattern is formed includes the steps of: forming a MnOx film 205 by ALD; subjecting a surface of the MnOx film to hydrogen radical treatment; forming a Ru film 206 by CVD on the surface of the MnOx film after the hydrogen radical treatment; and forming a Cu-based film 207 by PVD to fill the Cu-based film 207 in the recess 203. When the Ru film 206 is formed, a film-formation condition of the MnOx film 205 and a condition of the hydrogen radical treatment are set such that nucleus formation is facilitated and the Ru film 206 is formed in a state where a surface smoothness is high.SELECTED DRAWING: Figure 2