| 发明名称 |
HIGH-PURITY 1H-HEPTAFLUOROCYCLOPENTENE |
| 摘要 |
The present invention is a 1H-Heptafluorocyclopentene having a purity of 99.9 wt% or more and an organochlorine-based compound content of 350 ppm by weight or less. The present invention provides a high-purity 1H-Heptafluorocyclopentene that may be useful as a plasma reaction gas for semiconductors. |
| 申请公布号 |
EP2960224(A4) |
申请公布日期 |
2016.09.14 |
| 申请号 |
EP20140754553 |
申请日期 |
2014.02.19 |
| 申请人 |
ZEON CORPORATION |
发明人 |
SUGIMOTO, TATSUYA |
| 分类号 |
C07C23/08;C07B61/00;C07C17/23;C07C17/354;C07C17/383;H01L21/3065 |
主分类号 |
C07C23/08 |
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