发明名称 |
SHRINK MATERIAL AND PATTERN FORMING PROCESS |
摘要 |
A shrink material is provided comprising a polymer comprising recurring units of formula (1) and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern. |
申请公布号 |
EP3032333(A3) |
申请公布日期 |
2016.09.07 |
申请号 |
EP20150197580 |
申请日期 |
2015.12.02 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
KUMAKI, KENTARO;WATANABE, SATOSHI;DOMON, DAISUKE;HATAKEYAMA, JUN |
分类号 |
G03F7/40;G03F7/004;G03F7/039;G03F7/32 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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