| 摘要 |
In one aspect, methods of making semiconducting single-walled carbon nanotubes are disclosed in the present invention. In some implementations, a method of making semiconducting single-walled carbon nanotubes comprises a step of providing a plurality of semiconducting nanotube seeds including (n,m) nanotube seeds and non-(n,m) nanotube seeds. The method further comprises a step of illuminating the nanotube seeds with a first laser beam having a first wavelength and a second laser beam having a second wavelength, the second wavelength differing from the first wavelength. The first wavelength corresponds to an absorption maximum for a (n,m) carbon nanotube, and the second wavelength corresponds to a photoluminescence emission frequency for the (n,m) carbon nanotube. |
