发明名称 INTERNAL VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
摘要 An internal voltage generation circuit includes a first control signal generation unit suitable for generating a first control signal activated to a level of a second external voltage when a first external voltage is activated, a second control signal generation unit suitable for generating a second control signal that equals the higher of the second external voltage and an internal voltage, and a voltage generation unit suitable for generating the internal voltage by performing a charge pumping operation based on the second external voltage and an oscillation signal while blocking a current flowing through a generation node from which the internal voltage is generated, based on the first and second control signals.
申请公布号 US2016224050(A1) 申请公布日期 2016.08.04
申请号 US201514738387 申请日期 2015.06.12
申请人 SK hynix Inc. 发明人 KIM Yeon-Uk
分类号 G05F3/26 主分类号 G05F3/26
代理机构 代理人
主权项 1. An internal voltage generation circuit comprising: a first control signal generation unit suitable for generating a first control signal activated to a level of a second external voltage when a first external voltage is activated; a second control signal generation unit suitable for generating a second control signal that equals the higher of the second external voltage and an internal voltage; and a voltage generation unit suitable for generating the internal voltage by performing a charge pumping operation based on the second external voltage and an oscillation signal, while blocking a current flowing through a generation node from which the internal voltage is generated, based on the first and second control signals.
地址 Gyeonggi-do KR