发明名称 |
INTERNAL VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME |
摘要 |
An internal voltage generation circuit includes a first control signal generation unit suitable for generating a first control signal activated to a level of a second external voltage when a first external voltage is activated, a second control signal generation unit suitable for generating a second control signal that equals the higher of the second external voltage and an internal voltage, and a voltage generation unit suitable for generating the internal voltage by performing a charge pumping operation based on the second external voltage and an oscillation signal while blocking a current flowing through a generation node from which the internal voltage is generated, based on the first and second control signals. |
申请公布号 |
US2016224050(A1) |
申请公布日期 |
2016.08.04 |
申请号 |
US201514738387 |
申请日期 |
2015.06.12 |
申请人 |
SK hynix Inc. |
发明人 |
KIM Yeon-Uk |
分类号 |
G05F3/26 |
主分类号 |
G05F3/26 |
代理机构 |
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代理人 |
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主权项 |
1. An internal voltage generation circuit comprising:
a first control signal generation unit suitable for generating a first control signal activated to a level of a second external voltage when a first external voltage is activated; a second control signal generation unit suitable for generating a second control signal that equals the higher of the second external voltage and an internal voltage; and a voltage generation unit suitable for generating the internal voltage by performing a charge pumping operation based on the second external voltage and an oscillation signal, while blocking a current flowing through a generation node from which the internal voltage is generated, based on the first and second control signals. |
地址 |
Gyeonggi-do KR |