半導体基板上での逆相境界の無いＩＩＩ−Ｖ化合物半導体材料およびその製造方法

摘要

Method for manufacturing a III-V compound semiconductor material comprising: providing a substrate made of a first semiconductor material having a {001} orientation, an insulating layer overlying and in contact with the substrate and a recessed region in the insulating layer which exposes the substrate; forming a buffer layer of a group IV semiconductor material overlying and in contact with the exposed substrate in the recessed region; applying a thermal treatment at a temperature higher or equal to a roughening temperature of the group IV semiconductor for roughening the surface of the buffer layer, such that the buffer layer takes a rounded shape having a double stepped surface; and filling at least partially the recessed region with a III-V compound semiconductor material which is overlying and in contact with the double stepped surface of the buffer layer.