| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal having only a low defect density.SOLUTION: A method for manufacturing a silicon carbide single crystal has the following steps. A silicon carbide seed crystal 4 having a first principal surface 4A and a second principal surface 4B which is the opposite side to the first principal surface 4A. The silicon carbide seed crystal 4 is fixed on a base material 1 through the first principal surface 4A. The second principal surface 4B is etched in the state that the silicon carbide seed crystal 4 is fixed on the base material 1. The base material 1 on which the silicon carbide seed crystal 4 whose second principal surface 4B has been etched is fixed is connected to a growing vessel 2 to thereby hold the silicon carbide seed crystal 4 in the growing vessel 2. A silicon carbide single crystal is grown on the second principal surface 4B in the growing vessel 2. |
