GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING AN ALUMINUM GALLIUM NITRIDE BARRIER LAYER

摘要

A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, and a first metallic structure electrically coupled to the second surface of the III-nitride substrate. The semiconductor structure further includes an AlGaN epitaxial layer coupled to the III-nitride epitaxial layer of the first conductivity type, and a III-nitride epitaxial structure of a second conductivity type coupled to the AlGaN epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure.

主权项

1. A III-nitride HEMT comprising:
a substrate comprising a first n-type III-nitride material; a drift region comprising a second n-type III-nitride material coupled to the substrate and disposed adjacent to the substrate along a vertical direction; an AlGaN barrier layer coupled to the drift region; a p-type III-nitride epitaxial layer coupled to the AlGaN barrier layer; a Schottky contact coupled to the p-type III-nitride epitaxial layer; and a plurality of electrical contacts coupled to the AlGaN drift region.