| 摘要 |
The semiconductor device comprises: two or more line repeating units continued with a plurality of line patterns formed on a substrate to be successively placed and with four line patterns among the plurality of line patterns having a variable width in accordance with the position as one line repeating unit. In order to form the plurality of line patterns including two or more line repeating units, a plurality of reference patterns are formed repeatedly with a certain reference pitch on a feature layer. A plurality of first spacers are formed to cover both side walls of each of the plurality of reference patterns. The plurality of reference patterns are removed, and a plurality of second spacers are formed to cover both side walls of each of the plurality of first spacers. The plurality of first spacers are removed, and the feature layer is etched by using the plurality of second spacers as an etching mask. The present invention is to provide a semiconductor device, as a result to prevent defects due to a variety of process variables, having minute patterns with a variety of widths, which surpass a resolution limit in a photolithography process and which are formed repeatedly with a certain cycle, and to provide a manufacturing method of the semiconductor device, which can reduce the application frequency of the photolithography process, prevent defects due to a variety of process variables, and simultaneously form minute patterns having a variety of widths, which surpass the resolution limit in the photolithography process. |
