| 摘要 |
Provided is a method for producing a film comprising Si and a metal M at a more efficient vapor deposition rate. In the method for producing a film comprising Si and a metal M, a film having columnar aggregates is formed on a substrate by vapor deposition using Si and a metal M (where the metal M is a metal other than Si) as the evaporation source. Vapor deposition is performed under the following conditions (1) and (2): (1) the temperature of the evaporation source at the time of vapor deposition is at least 100 K higher than the melting point of the evaporation source; and (2) the mean free path (?) of the Si atoms at the time of vapor deposition is shorter than the distance (D) between the evaporation source and the substrate. |
