NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICE BASED ON FAST DIFFUSIVE METAL ATOMS

摘要

A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a crosspoint of the array. Each non-volatile memory cell comprises a switching layer in series with an NDR material containing fast diffusive atoms that are electrochemically inactive. The switching layer is positioned between two elec-trodes.