发明名称 DELAY-BASED READ SYSTEM FOR A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) BIT
摘要 In one example, the disclosure is directed to a memory system comprising a control module. The memory system further includes a first circuit and a second circuit that each receives a control signal from the control module. Each circuit includes a resistor (MRAM element or a fixed resistor) and a capacitor situated between the resistorand a reference voltage. The first circuit is configured to output a data signal after the first capacitor is charged. The second circuit is configured to output a reference signal after the second capacitor is charged. The memory system further includes an arbiter configured to receive the data signal from the first circuit and the reference signal from the second circuit, determine whether the data signal arrived before the reference signal, and determine whether the MRAM is in a high or low state based on whether the data signal or the reference signal arrived first.
申请公布号 EP3035336(A1) 申请公布日期 2016.06.22
申请号 EP20150198546 申请日期 2015.12.08
申请人 HONEYWELL INTERNATIONAL INC. 发明人 SMITH, MICHAEL A.
分类号 G11C11/16;G11C13/00 主分类号 G11C11/16
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