| 摘要 |
A method for producing a GaNLED device, wherein a stack of layers (9) comprising at least a GaN layer is texturized, the method comprising the steps of providing a substrate (20) comprising on its surface said stack of layers (9), depositing a resist layer (30) directly on said stack (9), positioning a mask (31) above said resist layer (30), said mask covering one or more first portions (33) of said resist layer (30) and not covering one or more second portions (32) of said resist layer (30), exposing said second portions (32) of said resist layer (30) to a light source, removing the mask (31), bringing the resist layer (30) in contact with a developer comprising potassium, wherein said developer removes said resist portions (32) that have been exposed and texturizes the surface of at least the top layer of said stack by wet etching said surface, in the areas (34) situated underneath said resist portions that have been exposed. |
