| 发明名称 |
SEMICONDUCTOR ARRANGEMENT |
| 摘要 |
A semiconductor arrangement comprising a substrate having a first trench formed therein, a field plate layer arranged to extend within the first trench and coat the first trench, the field plate layer having a thickness such that it defines a second trench within the first trench, a barrier layer arranged to coat an internal surface of the second trench; and a trench fill material configured to substantially planarize the first and second trenches. |
| 申请公布号 |
US2016172451(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201514879394 |
申请日期 |
2015.10.09 |
| 申请人 |
NXP B.V. |
发明人 |
Igel-Holtzendorff Thomas;Behtash Reza;Boettcher Tim |
| 分类号 |
H01L29/40;H01L21/02;H01L21/3105;H01L21/321 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor arrangement comprising
a substrate having a first trench formed therein, a field plate layer arranged to extend within the first trench, the field plate layer having a thickness such that it defines a second trench within the first trench,
a trench fill material configured to substantially planarize the first and second trenches wherein the arrangement includes a barrier layer arranged to coat an internal surface of the second trench between the field plate layer and the trench fill material. |
| 地址 |
Eindhoven NL |
