发明名称 STAIR STEP FORMATION USING AT LEAST TWO MASKS
摘要 Apparatuses and methods for stair step formation using at least two masks, such as in a memory device, are provided. One example method can include forming a first mask over a conductive material to define a first exposed area, and forming a second mask over a portion of the first exposed area to define a second exposed area, the second exposed area is less than the first exposed area. Conductive material is removed from the second exposed area. An initial first dimension of the second mask is less than a first dimension of the first exposed area and an initial second dimension of the second mask is at least a second dimension of the first exposed area plus a distance equal to a difference between the initial first dimension of the second mask and a final first dimension of the second mask after a stair step structure is formed.
申请公布号 EP2870629(A4) 申请公布日期 2016.06.15
申请号 EP20130813187 申请日期 2013.07.03
申请人 MICRON TECHNOLOGY, INC. 发明人 HA, CHANG, WAN;WOLSTENHOLME, GRAHAM R.;THIMMEGOWDA, DEEPAK
分类号 H01L21/8247;H01L21/033;H01L21/3213;H01L21/768;H01L27/115 主分类号 H01L21/8247
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