| 摘要 |
A semiconductor pixel unit for sensing near-infrared (NIR) light, and for optionally simultaneously sensing visible (R,G,B) light. The pixel unit comprises a single substrate with a first semiconductor region (101) and a second semiconductor region (104) electrically separated by an insulating region (102), for example a buried oxide layer. The pixel unit is adapted for generating a lateral electrical field (Edrift) in the second region (104) for facilitating transport of photoelectrons generated in the second region by near-infrared light (N) passing through the first region (101) and the insulating region (102). |
