| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve detection sensitivity and special resolution. SOLUTION: The device has a constitution wherein a junction semiconductor film 7 forming hetero junction to a sensitive semiconductor film 6 is divided and formed corresponding to two-dimensional array arrangement, in a p-type high resistivity induction semiconductor film 6 laminated and formed in a glass substrate 3 with a common electrode 4, and a p-type low resistance semiconductor film 5 interposed therebetween. Carrier generated by a direct conversion method in the p-type high resistivity sensitive semiconductor film 6 is restrained from leaking and spreading by light or radiant rays injected from a common electrode non-formation side of the glass substrate 3 and carrier is collected according to an element by an individual electrode 8 close to a generation position, thus improving detection sensitivity and space resolution. That is, a dynamic range is large and a crosstalk is reduced.</p> |
