| 摘要 |
Disclosed is a dry-cleaning method for removing a metal film adhered to a film-formation apparatus by using ²-diketone, the dry-cleaning method being characterized by that a gas containing ²-diketone and NOx (representing at least one of NO and N 2 O) is used as a cleaning gas and that the metal film within a temperature range of 200 °C to 400 °C is reacted with the cleaning gas, thereby removing the metal film. According to this method, it is possible to make etching progress even if there occurs a temperature difference depending on the position of the adhered metal film. |
