发明名称 MEMS CAPPING METHOD
摘要 A method for fabricating a MEMS device includes providing a substrate having a front surface and a back surface, and forming a protruding engagement member on the front surface of the substrate. The protruding engagement member has an inner periphery defining a groove and an outer periphery. The method also includes forming a first trench having a first depth along the outer periphery, forming a patterned mask layer on the protruding engagement member covering the groove and exposing a portion of the first trench. The method further includes etching the exposed portion of the first trench to form a second trench having a second depth, removing the patterned mask layer, bonding the substrate with a MEMS substrate to form the MEMS device, and thinning the back surface to within the second depth. The method prevents dust from being deposited on the MEMS substrate as in the case of cutting.
申请公布号 US2016152467(A1) 申请公布日期 2016.06.02
申请号 US201615018740 申请日期 2016.02.08
申请人 SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION 发明人 JIANG LUSHAN;Chen Xiaojun;Liu Xuanjie;Guo Liangliang;Ma Junde
分类号 B81B7/00;B81C1/00 主分类号 B81B7/00
代理机构 代理人
主权项
地址 Shanghai CN