PHOTODIODE AND MANUFACTURING METHOD THEREFOR, AND X-RAY DETECTOR AND MANUFACTURING METHOD THEREFOR

摘要

A PIN photodiode comprises a first doped layer (6), a second doped layer (8), and an intrinsic layer (7) located between the first doped layer and the second doped layer. The first doped layer is disposed on a source/drain electrode layer (5) of a thin film transistor of the X-ray detector. A heavily-doped region (9), the doping concentration of which is greater than that of the second doped layer, is disposed in the second doped layer. The heavily-doped region is electrically connected to a cathode (11) of the PIN photodiode.