发明名称 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 A thin film transistor substrate comprises: a gate metal pattern including a gate line extended in a first direction and a gate electrode electrically connected to the gate line; an active pattern overlapping the gate electrode; an etch-stop layer disposed on the active pattern; a data metal pattern including a data line extended in a second direction crossing the first direction, a source electrode electrically connected to the data line and electrically connected to the active pattern through a first through-hole formed in the etch-stop layer, and a drain electrode separated from the source electrode and electrically connected to the active pattern through a second through-hole adjacent to the first through-hole; and a first passivation layer disposed on the data metal pattern. According to embodiments of the present invention, masks used in manufacturing processes may be reduced.
申请公布号 KR20160062322(A) 申请公布日期 2016.06.02
申请号 KR20140164697 申请日期 2014.11.24
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 CHOI, YOUNG JOO;LEE, HYEON JUN;PARK, BYUNG GYU;PARK, EUN HYE;CHU, BYUNG HWAN
分类号 H01L29/786;H01L27/32 主分类号 H01L29/786
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