发明名称 |
POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
Provided are a power semiconductor device and method of fabricating the same, in particular a power semiconductor device such as an Insulated Gate Bipolar Transistor (IGBT) including a cell region with a trench structure formed to include a dummy trench and a first trench and a termination region with a termination ring formed surrounding the cell region. Such a power semiconductor device is designed to operable with high power conditions such as when an operating voltage is 600 V, 1200 V and so on. |
申请公布号 |
US2016155794(A1) |
申请公布日期 |
2016.06.02 |
申请号 |
US201514734326 |
申请日期 |
2015.06.09 |
申请人 |
Magnachip Semiconductor, Ltd. |
发明人 |
KIM In Su |
分类号 |
H01L29/06;H01L29/08;H01L29/10;H01L29/66;H01L29/739 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
|
主权项 |
1. A power semiconductor device comprising:
a substrate; a trench structure situated in the substrate and comprising first trenches and dummy trenches formed adjacent to the first trenches; a first well region of a second conductivity type situated between the first trenches; a base region of a first conductivity type situated on the first well region; a source region of the second conductivity type and a first contact region of the first conductivity type situated in the base region; gate insulating layers situated in the first trenches and the dummy trenches; gate electrodes situated on the gate insulating layers; a field stop layer situated below the base region; a collector layer and a drain electrode situated below the field stop layer; and a dummy cell region situated between the first trenches and the dummy trenches, wherein the dummy cell region has no channel region. |
地址 |
Cheongju-si KR |