| 摘要 |
Disclosed are a cross-point memory device including multi-level cells and an operating method thereof. The method for operating a cross-point memory device including a memory cell array according to the technical features of the present invention, wherein the memory cell array includes multi-level cells, comprises the steps of: primarily reading the multi-level cells via multiple times of sensing operations to determine a first state; and secondarily reading the multi-level cells via multiple times of sensing operations to determine a second state. A level difference between a first voltage, which is used for the first sensing operation, and a second voltage, which is used for the second sensing operation, in the primary reading step is different from a level difference between a third voltage, which is used for the first sensing operation, and a fourth voltage, which is used for the second sensing operation, in the secondary reading step. |
