A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity corresponds to the target band discontinuity.
申请公布号
EP2507820(B1)
申请公布日期
2016.06.01
申请号
EP20100835241
申请日期
2010.12.04
申请人
SENSOR ELECTRONIC TECHNOLOGY, INC.
发明人
SHATALOV, MAXIM, S.;GASKA, REMIGIJUS;YANG, JINWEI;SHUR, MICHAEL