| 发明名称 | Semiconductor device including air gaps and method of fabricating the same | ||
| 摘要 | A semiconductor device including air gaps and a method of fabricating the same. The semiconductor device in accordance with an embodiment may include a bit line structure having a bit line formed over a first contact plug, a second contact plug formed adjacent to the first contact plug and the bit line structure, an air gap structure comprising two or more air gaps to surround the second contact plug and have an outer sidewall in contact with the bit line structure, and one or more capping support layers separating the air gaps, a third contact plug capping a part of the air gap structure and being formed over the second contact plug, and a capping layer for capping a remainder of the air gap structure. | ||
| 申请公布号 | US9356073(B1) | 申请公布日期 | 2016.05.31 |
| 申请号 | US201514716534 | 申请日期 | 2015.05.19 |
| 申请人 | SK Hynix Inc. | 发明人 | Kim Min-Ho |
| 分类号 | H01L23/48;H01L23/522;H01L27/108;H01L21/768;H01L21/764;H01L27/24;H01L23/532;H01L23/535;H01L23/528;H01L29/423;H01L21/311;H01L21/762 | 主分类号 | H01L23/48 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device comprising: a bit line structure including a bit line formed over a first contact plug; a second contact plug formed adjacent to the first contact plug and the bit line structure; an air gap structure including two or more air gaps to surround the second contact plug and having an outer sidewall in contact with the bit line structure, and one or more capping support layers separating the air gaps; a third contact plug suitable for capping a part of the air gap structure and is formed over the second contact plug; and a capping layer suitable for capping a remainder of the air gap structure. | ||
| 地址 | Gyeonggi-do KR | ||