Method and apparatus capable of synthesizing high-density wires in pores and on surface of porous material

摘要

According to an embodiment of the present invention, provided is a method of synthesizing nanowires that includes the following steps of: disposing a covering inside a reaction furnace such that the covering is spaced apart by a predetermined gap from a substrate which is provided for synthesis of nanowires; heating the reaction furnace; and synthesizing nanowires by allowing a source gas to be deposited on the substrate while flowing through the gap between the substrate and the covering.

主权项

1. A method of synthesizing nanowires comprising following steps of:
placing a substrate on which nanowires are to be synthesized inside a reaction furnace; disposing a covering inside a reaction furnace such that the covering is spaced apart by a predetermined gap from surfaces of the substrate and is arranged in parallel with the substrate; heating the reaction furnace; and synthesizing nanowires on the substrate by allowing a flow of a source gas of organic silicon compound into the reaction furnace, the source gas of organic silicon compound being deposited on the substrate while flowing through the predetermined gap between the substrate and the covering, wherein the covering retards the flow of the source gas of organic silicon compound while flowing through the predetermined gap between the substrate and the covering, the method of synthesizing nanowires is devoid of any catalysts, and the nanowires synthesized on the surfaces of the substrate have a clearer shape as a size of the predetermined gap between the substrate and the covering decreases.