Nonvolatile memory device including a source line having a three-dimensional shape

摘要

A nonvolatile memory device includes a source line having a shape of a three-dimensional (3D) cap. The nonvolatile memory device includes a first vertical channel and a second vertical channel, a source contact disposed over the first vertical channel, a drain contact disposed over the second vertical channel, a source-line barrier disposed between the source contact and the drain contact, and a source-line plate coupling the source contact and the source-line barrier.

主权项

1. A nonvolatile memory device comprising:
a first vertical channel film and a second vertical channel film; a source contact disposed over the first vertical channel film; a drain contact disposed over the second vertical channel film; and a source line coupled to the source contact, wherein the source line includes:
a source-line plate coupled to the source contact and extending in a first direction; anda source-line barrier disposed between the source contact and the drain contact and extending in a second direction crossing the first direction.