Semiconductor device structures and arrays of vertical transistor devices

摘要

A semiconductor device structure is disclosed. The semiconductor device structure includes a mesa extending above a substrate. The mesa has a channel region between a first side and second side of the mesa. A first gate is on a first side of the mesa, the first gate comprising a first gate insulator and a first gate conductor comprising graphene overlying the first gate insulator. The gate conductor may comprise graphene in one or more monolayers. Also disclosed are a method for fabricating the semiconductor device structure; an array of vertical transistor devices, including semiconductor devices having the structure disclosed; and a method for fabricating the array of vertical transistor devices.

主权项

1. A semiconductor device structure, comprising:
a mesa extending above a substrate, the mesa comprising:
a channel region between a first vertical sidewall and a second vertical sidewall of the mesa; and a first gate on the first vertical sidewall of the mesa, the first gate comprising:
a first gate insulator overlying the first vertical sidewall of the mesa; anda first gate conductor comprising graphene overlying a vertical sidewall of the first gate insulator; another mesa extending above the substrate; another first gate on another first vertical sidewall of the another mesa, the another first gate comprising:
another first gate insulator overlying the another first vertical sidewall of the another mesa; andanother first gate conductor comprising graphene overlying a vertical sidewall of the another first gate insulator; and a metal seed laterally between and spaced from the mesa and the another mesa, the metal seed spaced from the first gate insulator and the another first gate insulator, and the metal seed contacting and extending between the first gate conductor of the first gate on the mesa and the another first gate conductor of the another first gate on the another mesa.