| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve improvement in humidity resistance and improvement in heat dissipation capacity.SOLUTION: A semiconductor device 100 comprises AlGaN layers 31, 52, contact electrodes 9, 8, an insulation film 10 and a passivation film 11. The semiconductor device further comprises lead-out interconnections 29, 28 formed to bridge the contact electrodes 9, 8 and the insulation film 10, and pad electrodes 19, 18 electrically connected to the lead-out interconnections 29, 28. The passivation film 11 is formed to cover the insulation film 10 and the lead-out interconnections 29, 28 and has openings 13, 12 formed to expose the pad electrodes 19, 18. The insulation film 10 includes the openings 13, 12 in plan view. The passivation film 11 includes the contact electrodes 9, 8 in plan view. the semiconductor device 100 a heat dissipation layer 60 on a surface 11a of the passivation film 11.SELECTED DRAWING: Figure 1 |
